1. The term MOS in MOS transistor stands for:
(A) Metal Oxide Semiconductor
(B) Metal Oxide Silicon
(C) Metallic Oxide Semiconductor
(D) Micro Oxide Semiconductor
2. The MOSFET is a type of:
(A) Voltage-controlled device
(B) Current-controlled device
(C) Power amplifier
(D) Passive component
3. The gate terminal of a MOSFET is insulated from the channel by a thin layer of:
(A) Silicon dioxide
(B) Silicon nitride
(C) Aluminum oxide
(D) Glass
4. The two main types of MOSFETs are:
(A) Enhancement and Depletion types
(B) NPN and PNP
(C) JFET and BJT
(D) Linear and Non-linear
5. In an n-channel enhancement MOSFET, the channel is formed when:
(A) Positive voltage is applied to the gate
(B) Negative voltage is applied to the gate
(C) Gate is grounded
(D) Drain is positive
6. The source and drain regions of a MOSFET are typically:
(A) Heavily doped
(B) Lightly doped
(C) Undoped
(D) Intrinsic
7. The substrate of an n-channel MOSFET is usually:
(A) p-type
(B) n-type
(C) Intrinsic
(D) Metallic
8. The controlling terminal of a MOSFET is the:
(A) Gate
(B) Source
(C) Drain
(D) Substrate
9. The current in a MOSFET flows between:
(A) Source and Drain
(B) Gate and Source
(C) Gate and Drain
(D) Source and Substrate
10. The thin oxide layer in MOSFET acts as a:
(A) Dielectric
(B) Conductor
(C) Semiconductor
(D) Insulator only for AC
11. The operation of a MOSFET depends mainly on:
(A) Electric field
(B) Magnetic field
(C) Thermal conductivity
(D) Mechanical pressure
12. The MOSFET is often preferred over BJT because it:
(A) Consumes less power
(B) Has higher current gain
(C) Is more temperature dependent
(D) Has slower switching speed
13. The region of MOSFET operation where it acts as an amplifier is called:
(A) Saturation region
(B) Cutoff region
(C) Linear region
(D) Ohmic region
14. The cutoff region of a MOSFET means:
(A) No channel is formed, and current is zero
(B) Channel conducts maximum current
(C) The device is in linear operation
(D) Drain current increases with gate voltage
15. The linear region of a MOSFET is also known as the:
(A) Ohmic region
(B) Active region
(C) Breakdown region
(D) Cutoff region
16. The voltage required to form a channel in a MOSFET is called:
(A) Threshold voltage
(B) Breakdown voltage
(C) Cutoff voltage
(D) Supply voltage
17. In CMOS technology, both NMOS and PMOS transistors are used to:
(A) Reduce power consumption
(B) Increase current gain
(C) Increase output resistance
(D) Enhance noise
18. The gate current in an ideal MOSFET is approximately:
(A) Zero
(B) Maximum
(C) Equal to drain current
(D) Equal to source current
19. The input impedance of a MOSFET is:
(A) Very high
(B) Very low
(C) Moderate
(D) Same as a BJT
20. The output impedance of a MOSFET in saturation region is:
(A) High
(B) Low
(C) Zero
(D) Infinite
21. In a PMOS transistor, the majority carriers are:
(A) Holes
(B) Electrons
(C) Both electrons and holes
(D) None of the above
22. In an NMOS transistor, the majority carriers are:
(A) Electrons
(B) Holes
(C) Both electrons and holes
(D) Ions
23. Short-channel effects in MOSFETs occur due to:
(A) Scaling down of device dimensions
(B) High input impedance
(C) Large oxide thickness
(D) Increased power supply
24. Channel-length modulation in MOSFETs is similar to:
(A) Early effect in BJTs
(B) Avalanche breakdown
(C) Punch-through effect
(D) Thermal runaway
25. The oxide layer thickness in modern MOSFETs is typically in the range of:
(A) Nanometers
(B) Micrometers
(C) Millimeters
(D) Centimeters
26. The drain current in a MOSFET can be controlled by:
(A) Gate voltage
(B) Drain voltage only
(C) Source voltage only
(D) Substrate bias only
27. The body effect in MOSFET refers to:
(A) Change in threshold voltage due to substrate bias
(B) Leakage current in gate oxide
(C) Channel mobility reduction
(D) Drain resistance increase
28. Hot-carrier effect in MOSFETs occurs due to:
(A) High electric fields near the drain
(B) Low temperature operation
(C) Weak gate oxide
(D) High threshold voltage
29. The subthreshold current flows in a MOSFET when:
(A) Gate voltage is below threshold
(B) Gate voltage is above threshold
(C) Device is in cutoff
(D) Device is fully saturated
30. The main advantage of scaling down MOSFET dimensions is:
(A) Higher speed and lower power consumption
(B) Increased delay
(C) Reduced integration density
(D) Higher heat generation